aptm10dum05tg aptm10dum05tg? rev 2 january, 2010 www.microsemi.com 1-6 s q1 q2 d2 s2 s1 g1 g2 d1 nt c1 nt c2 d2 ntc2 d2 s1 d1 ntc1 s2 g2 s2 g2 s g1 absolute maximum ratings these devices are sens itive to electrostatic discharge. prope r handling procedures should be follow ed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 100 v t c = 25c 278 i d continuous drain current t c = 80c 207 i dm pulsed drain current 1100 a v gs gate - source voltage 30 v r dson drain - source on resistance 5 m p d maximum power dissipation t c = 25c 780 w i ar avalanche current (repetitive and non repetitive) 100 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 3000 mj v dss = 100v r dson = 4.5m typ @ tj = 25c i d = 278a @ tc = 25c application ? ac switches ? switched mode power supplies ? uninterruptible power supplies features ? power mos v ? mosfets - low r dson - low input and miller capacitance - low gate charge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? internal thermistor fo r temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant dual common source mosfet power module
aptm10dum05tg aptm10dum05tg? rev 2 january, 2010 www.microsemi.com 2-6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 100v t j = 25c 200 i dss zero gate voltage drain current v gs = 0v,v ds = 80v t j = 125c 1000 a r ds(on) drain ? source on resistance v gs = 10v, i d = 125a 4.5 5 m v gs(th) gate threshold voltage v gs = v ds , i d = 5ma 2 4 v i gss gate ? source leakage current v gs = 30 v, v ds = 0v 200 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 20 c oss output capacitance 8 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 2.9 nf q g total gate charge 700 q gs gate ? source charge 120 q gd gate ? drain charge v gs = 10v v bus = 50v i d = 250a 360 nc t d(on) turn-on delay time 80 t r rise time 165 t d(off) turn-off delay time 280 t f fall time inductive switching @ 125c v gs = 15v v bus = 66v i d = 250a r g = 2.5 135 ns e on turn-on switching energy 1.1 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 66v i d = 250a, r g =2.5 ? 1.2 mj e on turn-on switching energy 1.22 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 66v i d = 250a, r g = 2.5 ? 1.28 mj source - drain diode ratings and characteristics symbol characteristic test conditions min typ max unit tc = 25c 278 i s continuous source current (body diode) tc = 80c 207 a v sd diode forward voltage v gs = 0v, i s = - 250a 1.3 v dv/dt peak diode recovery x 5 v/ns t rr reverse recovery time t j = 25c 270 ns q rr reverse recovery charge i s = - 250a v r = 66v di s /dt = 200a/s t j = 25c 5.8 c x dv/dt numbers reflect the limitations of the circuit rather than the device itself. i s - 278a di/dt 200a/s v r v dss t j 150c
aptm10dum05tg aptm10dum05tg? rev 2 january, 2010 www.microsemi.com 3-6 thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance 0.16 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp4 package outline (dimensions in mm) all dimensions marked " * " are tolerenced as : see application note apt0501 - mounting instruc tions for sp4 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
aptm10dum05tg aptm10dum05tg? rev 2 january, 2010 www.microsemi.com 4-6 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impeda nce, junction to case vs pulse duration 6v 7v 8v 0 200 400 600 800 1000 1200 0 4 8 1216202428 v ds , drain to source voltage (v) i d , drain current (a) low voltage output characteristics v gs =15v, 10v & 9v transfert characteristics t j =-55c t j =25c t j =125c 0 40 80 120 160 200 240 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds(on) vs drain current v gs =10v v gs =20v 0.8 0.9 1 1.1 1.2 0 25 50 75 100 125 150 175 200 i d , drain current (a) r ds(on) drain to source on resistance normalized to v gs =10v @ 125a 0 50 100 150 200 250 300 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
aptm10dum05tg aptm10dum05tg? rev 2 january, 2010 www.microsemi.com 5-6 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown volta g e ( normalized ) breakdown voltage vs temperature on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) rds(on), drain to source on resistance (normalized) v gs =10v i d = 125a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10ms 1ms 100s 10 100 1000 10000 1 10 100 v ds , drain to source voltage (v) i d , drain current (a) single pulse t j =150c t c =25c limited by r dson ciss crss coss 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =20v v ds =50v v ds =80v 0 2 4 6 8 10 12 14 16 0 200 400 600 800 1000 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =250a t j =25c
aptm10dum05tg aptm10dum05tg? rev 2 january, 2010 www.microsemi.com 6-6 delay times vs current t d(on) t d(off) 0 50 100 150 200 250 300 350 0 100 200 300 400 i d , drain current (a) t d(on) and t d(off) (ns) v ds =66v r g =2.5 ? t j =125c l=100h rise and fall times vs current t r t f 0 50 100 150 200 250 0 100 200 300 400 i d , drain current (a) t r and t f (ns) v ds =66v r g =2.5 ? t j =125c l=100h switching energy vs current e on e off e off 0 0.5 1 1.5 2 2.5 3 0 100 200 300 400 i d , drain current (a) e on and e off (mj) v ds =66v r g =2.5 ? t j =125c l=100h e on e off 0 1 2 3 4 5 0 5 10 15 20 25 30 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =66v i d =200a t j =125c l=100h hard switching zvs zcs 0 20 40 60 80 100 50 100 150 200 250 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =66v d=50% r g =2.5 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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